SKR16(2009) Просмотр технического описания (PDF) - Semikron

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Компоненты Описание

производитель

SKR16
(Rev.:2009)

DIODE

Semikron 

SKR 16,3 x 18,2 Qu bond

DIODE

IF(DC) = 365 A

VRRM = 1600 V

Size: 16,3 mm x 18,2 mm

SKR 16,3 x 18,2 Qu bond

Features

• high current density due to mesa

technology

• high surge current

• compatible to thick wire bonding

• compatible to all standard solder

processes

Typical Applications

• uncontrolled rectifier bridges

Absolute Maximum Ratings

Symbol Conditions

VRRM

IF(AV)

I2t

IFSM

Tjmax

Tj = 25 °C, IR = 0.4 mA

Tc = 80 °C, Tj = 150 °C

Tj = 150 °C, 10 ms, sin 180°

10 ms

Tj = 25 °C

sin 180°

Tj = 150 °C

Electrical Characteristics

Symbol Conditions

IR

VF

V(TO)

rT

trr

Tj = 25 °C, VRRM

Tj = 120 °C, VRRM

Tj = 25 °C, IF = 320 A

Tj = 125 °C, IF = 320 A

Tj = 125 °C

Tj = 125 °C

Tj = 25 °C, ± 1 A

Thermal Characteristics

Symbol Conditions

Tj

Tstg

Tsolder

Tsolder

Rth(j-c)

10 min.

5 min.

Semipack 2 assembly

Mechanical Characteristics

Symbol Conditions

Raster

size

Area total

Anode

Cathode

Wire bond

Package

Chips /

Package

Values

1600

305

130050

6600

5100

150

Unit

V

A

A2s

A

A

°C

min.

typ.

max. Unit

0.4

mA

2.2

mA

1

1.21

V

0.9

1.1

V

0.83

V

0.5

mΩ

49

µs

min.

-40

-40

typ.

0.185

max. Unit

150

°C

150

°C

250

°C

320

°C

K/W

Values

16,3 x 18,2

296,66

bondable (Al)

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

tray

20

Unit

mm

mm2

pcs

SKR

© by SEMIKRON

Rev. 0 – 02.10.2009

1

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