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SKM500GA174D

SEMITRANS® M Low Loss IGBT Modules

Semikron 

SKM 500 GA 174 D

Absolute Maximum Ratings

Symbol Conditions 1)

VCES

VCGR

IC; ICN

ICM

VGES

Ptot

Tj, (Tstg)

Visol

humidity

climate

RGE = 20 kΩ

Tcase = 25/80 °C

Tcase = 25/80 °C; tp = 1 ms

per IGBT, Tcase = 25 °C

AC, 1 min. 4)

IEC 60721-3-3

IEC 68 T.1

Inverse Diode 8)

IF = –IC Tcase = 25/80 °C

IFM = –ICM Tcase = 25/80 °C; tp = 1 ms

IFSM

tp = 10 ms; sin.; Tj = 150 °C

I2t

tp = 10 ms; Tj = 150 °C

Values

1700

1700

600 / 440 5)

1200 / 880

± 20

3100

–40 ... +150 (125)

3400

class 3K7/IE32

40/125/56

600 / 440

1200 / 880

4400

96800

Units

V

V

A

A

V

W

°C

V

A

A

A

A2s

Characteristics

Symbol Conditions 1)

V(BR)CES

VGE(th)

ICES

IGES

VCEsat

gfs

VGE = 0, IC = 8 mA

VGE = VCE, IC = 18 mA

VGE = 0

Tj = 25 °C

VCE = VCES Tj = 125 °C

VGE = 20 V, VCE = 0

IC = 400 A VGE = 15 V;

IC = 500 A Tj = 25 (125) °C

VCE = 20 V, IC = 400 A

CCHC

Cies

Coes

Cres

LCE

per IGBT

VGE = 0

VCE = 25 V

f = 1 MHz

td(on)

tr

td(off)

tf

Eon

Eoff

VCC = 1200 V

VGE = –15 V / +15 V 3)

IC = 400 A, ind. load

RGon = RGoff = 3 Ω

Tj = 125 °C (VCC = 900 V/1200 V)

LS = 60 nH (VCC = 900 V/1200 V)

Inverse Diode 8)

min.

≥ VCES

4,5

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

VF = VEC IF = 400 A VGE = 0 V;

–

VF = VEC IF = 500 A Tj = 25 (125) °C

–

VTO

Tj = 125 °C

–

rt

Tj = 125 °C

–

IRRM

IF = 400 A; Tj = 25 (125) °C2)

–

Qrr

IF = 400 A; Tj = 25 (125) °C2)

–

Thermal characteristics

Rthjc

per IGBT

–

Rthjc

per diode D

–

Rthch

per module

–

typ.

–

5,5

0,1

16

–

2,8(3,2)

3,1(3,7)

220

–

27

3,8

1,3

–

350

100

1100

100

170/300

135/210

2,15(1,8)

2,3(2,0)

1,3

1,6

270(550)

70(117)

–

–

–

max.

–

6,5

1

–

0,3

3,3(3,6)

–

–

1,4

–

–

–

20

–

–

–

–

–

–

2,4(2,2)

–

1,5

2,1

–

–

0,040

0,070

0,038

Units

V

V

mA

mA

µA

V

V

S

nF

nF

nF

nF

nH

ns

ns

ns

ns

mWs

mWs

V

V

V

mΩ

A

µC

°C/W

°C/W

°C/W

SEMITRANS® M

Low Loss IGBT Modules

SKM 500 GA 174 D

SEMITRANS 4

GA

Features

• N channel, homogeneous Silicon

structure (NPT- Non punch-

through IGBT)

• Low inductance case

• High short circuit capability,

self limiting

• Fast & soft inverse CAL diodes 8)

• Without hard mould

• Large clearance (13 mm) and

creepage distances (20 mm)

Typical Applications

• AC inverter drives on mains

575 - 750 VAC

• DC bus voltage 750 - 1200 VDC

• Public transport (auxiliary syst.)

• Switching (not for linear use)

1) Tcase = 25 °C, unless otherwise

specified

2) IF = – IC, VR = 1200 V,

–diF/dt = 5000 A/µs, VGE = 0 V

3) Use VGEoff = – 5 ... – 15 V

4) Option Visol = 4000V/1 min add suffix

„H4“ - on request

5) Limited by terminals to IC(DC) = 500 A

at Tc = Tterminal ≤ 100 °C

8) CAL = Controlled Axial Lifetime

Technology

© by SEMIKRON

000828

B 6 – 73

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