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SIP12502DMP-20-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

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SIP12502DMP-20-E3 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Product is End of Life 3/2014
SiP12502
Vishay Siliconix
SPECIFICATIONS
Parameter
Supply Current 1
Supply Current 2
Supply Current 3
Stand-By Current
NMOS Switch Leakage
Symbol
IOUT1
IOUT2
IOUT3
ISTB
ILEAK
Test Conditions Unless Specified
VIN = 1.2 V, VOUT = Vnome, TA = 25 °C
VOUT = Vnom X 0.95
VOUT = 6 V, Vnom + 0.6 V, VLX > VIN
VOUT = Vnom + 0.5 V, VLX < VIN
XSHD = 0 V, not including switch leakage
Temp.a
Full
Full
LX = 5 V
Full
Min.b
Limits
Typ.c
330
150
75
1
Max.b
620
1
2
10
NMOS Switch On Resistance
PWM to PFM Current Threshold
PFM to PWM Current Threshold
RDS(on)
IWTOF
IFTOF
XSHD Input High Level
VXSHDH
XSHD Input Low Level
Softstart Time
Over Voltage Threshold
Over Voltage Hysteresis
Thermal Shutdown
Thermal Shutdown Hysteresis
PGOOD Threshold
PGOOD Hysteresis
PGOOD Output Voltage Low
PGOOD Output Leakage Current
VXSHDL
tSTART
VOV
VOVHYST
TSHD
THYST
VPGOOD
VPGOODHYST
PGGOODL
PGGOOD
VOUT = 3.3 V
0.8 V VIN 0.9 V
0.9 V < VIN 2 V
2 V < VIN 5 V
ViN = 1.8 V
VOUT = 3.3 V, IPGOOD = 1 mA
VPGOOD = 5 V
0.2
3
22
Full 0.55
Full
0.8
Full
1.2
Full
0.2
1.6
110
10
160
20
85
90
95
2
Full
0.15 0.2
Full
0.01
1
Notes:
a. Full = - 40 °C to 85 °C.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum (- 40 °C to 85 °C).
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Minimum operating voltage is determined by the battery’s capability to provide energy as it is deeply discharged.
e. Vnom equals voltage output for part selected.
Unit
µA
Ω
mA
V
ms
%
°C
%
V
µA
Document Number: 73578
S09-1456-Rev. B, 03-Aug-09
www.vishay.com
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