SIM200D06AV2 Просмотр технического описания (PDF) - SemiWell Semiconductor

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производитель

SIM200D06AV2

“HALF-BRIDGE” IGBT

SemiWell Semiconductor 

Preliminary

SIM200D06AV2

Fig.1, Output characteristic (typical)

IC = f(TVJ)

VGE = 15V

Fig.2,

Output characteristic (typical)

IC = f(VGE)

Tvj = 150℃

Fig.3, Transfer characteristic (typical)

IC = f(TVJ)

VCE = 20V

Fig.4, Reverse bias safe RBSOA)

IC = f(VGE)

VGE = ±15V, RGoff = 2.4Ω, Tvj = 150℃

Fig.5, Forward characteristic of diode (typical)

IF = f(TVJ)

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