IRFP21N60LPBF Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFP21N60LPBF

Power MOSFET

Vishay Semiconductors 

IRFP21N60L, SiHFP21N60L

Vishay Siliconix

D.U.T.

+

-

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

-

+

RG

• dV/dt controlled by RG

+

• Driver same type as D.U.T.

• ISD controlled by duty factor "D"

- VDD

• D.U.T. - device under test

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse

recovery

Body diode forward

current

current

dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt

VDD

Re-applied

voltage

Body diode forward drop

Inductor current

Ripple ≤ 5 %

ISD

* VGS = 5 V for logic level devices

Fig. 16 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91206.

Document Number: 91206

S-81273-Rev. B, 16-Jun-08

www.vishay.com

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