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SI5317 Просмотр технического описания (PDF) - Silicon Laboratories

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SI5317 Datasheet PDF : 50 Pages
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Si5317
Table 2. DC Characteristics (Continued)
(VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC)
Parameter
Symbol
Test Condition
Min Typ Max Units
Output Short to VDD
CKOISC+
VDD = 3.63 V
CML, LVDS, LVPECL
25
30
mA
VDD = 1.89 V
CML, LVDS
25
30
mA
VDD = 3.63 V
CMOS
190 200
mA
VDD = 1.89 V
CMOS
70
80
mA
Differential Output
Resistance
Common Mode Output
Resistance (to VDD)
CKORD
CKORCM
Disable
CML, LVPECL, LVDS,
Disable
CML, LVPECL, LVDS
Disable
1.5
2
µA
170 200 230
85
100 115
1
M
Output Voltage Low
Output Voltage High
CKOVOLLH
CKOVOHLH
CMOS
VDD = 1.71 V
CMOS
0.4
V
0.8 x VDD
V
Output Drive Current
CKOIO
CMOS
Driving into CKOVOL for out-
put low or CKOVOH for output
high. CKOUT+ and CKOUT–
shorted externally.
2-Level LVCMOS Input Pins
VDD = 1.71 V
VDD = 2.97 V
7.5
mA
32
mA
Input Voltage Low
VIL
VDD = 1.71 V
0.5
V
VDD = 2.25 V
0.7
V
VDD = 2.97 V
0.8
V
Input Voltage High
VIH
VDD = 1.89 V
1.4
V
VDD = 2.25 V
1.8
V
VDD = 3.63 V
2.5
V
Input Low Current
IIL
50
µA
Input High Current
IIH
50
µA
Weak Internal Input Pull-up
Resistor
RPUP
75
k
Notes:
1. LVPECL outputs require VDD > 2.25 V.
2. This is the amount of leakage that the 3L inputs can tolerate from an external driver. See Figure 3 on page 9. In most
designs, an external resistor voltage divider is recommended.
3. No overshoot or undershoot.
6
Preliminary Rev. 0.15

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