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SI5315 Просмотр технического описания (PDF) - Silicon Laboratories

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SI5315 Datasheet PDF : 54 Pages
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Si5315
Table 2. DC Characteristics (Continued)
(VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC)
Parameter
Symbol
Test Condition
Min Typ Max Units
LVCMOS Output Pins
Output Voltage Low
VOL
IO = 2 mA
0.4
V
VDD = 1.62 V
IO = 2 mA
VDD = 2.97 V
0.4
V
Output Voltage High
VOH
IO = –2 mA
VDD – 0.4 —
V
VDD = 1.62 V
IO = –2 mA
VDD – 0.4 —
V
VDD = 2.97 V
Disabled Leakage Current
IOZ
RST = 0
–100 —
100
µA
Single-Ended Reference Clock Input Pin XA (XB with Cap to Gnd)
Input Resistance
XARIN
XTAL/CLOCK = M
Input Voltage Level Limits
XAVIN
Input Voltage Swing
XAVPP
Differential Reference Clock Input Pins (XA/XB)
12
k
0
1.2
V
0.5
1.2
VPP
Input Resistance
Differential Input Voltage
Level Limits
XA/XBRIN
XA/XBVIN
XTAL/CLOCK = M
12
k
0
1.2
V
Input Voltage Swing
XAVPP/XBVPP
0.5
2.4
VPP
Notes:
1. Refers to Si5315A speed grade.
2. Refers to Si5315B speed grade.
3. This is the amount of leakage that the 3L inputs can tolerate from an external driver. See Figure 3 on page 11.
Rev. 1.0
7

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