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SI5315 Просмотр технического описания (PDF) - Silicon Laboratories

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SI5315 Datasheet PDF : 54 Pages
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Si5315
1. Electrical Specifications
Table 1. Recommended Operating Conditions
(VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC)
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
Temperature Range
TA
Supply Voltage
VDD
3.3 V nominal
2.5 V nominal
–40
25
85
ºC
2.97
3.3
3.63
V
2.25
2.5
2.75
V
1.8 V nominal
1.71
1.8
1.89
V
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise noted.
Table 2. DC Characteristics
(VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC)
Parameter
Symbol
Test Condition
Min Typ Max Units
Supply Current (Supply
current is independent of
VDD)
IDD
LVPECL Format
251 279
mA
644.53125 MHz Out
All CKOUTs Enabled1
LVPECL Format
217 243
mA
644.53125 MHz Out
Only 1 CKOUT Enabled1
CMOS Format
25.00 MHz Out
All CKOUTs Enabled2
204 234
mA
CMOS Format
194 220
mA
25.00 MHz Out
Only CKOUT1 Enabled2
CKINn Input Pins
Input Common Mode Voltage
(Input Threshold Voltage)
VICM
1.8 V ± 5%
2.5 V ± 10%
0.9
1.4
V
1.0
1.7
V
3.3 V ± 10%
1.1
1.95
V
Input Resistance
CKNRIN
Single-ended
20
40
60
k
Input Voltage Level Limits
CKNVIN
0
VDD
V
Notes:
1. Refers to Si5315A speed grade.
2. Refers to Si5315B speed grade.
3. This is the amount of leakage that the 3L inputs can tolerate from an external driver. See Figure 3 on page 11.
4
Rev. 1.0

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