SI4802DY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4802DY Datasheet PDF : 5 Pages
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Si4802DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
On-Resistance vs. Drain Current
1000
Capacitance
0.032
0.024
0.016
0.008
VGS = 4.5 V
VGS = 10 V
800
Ciss
600
400
Coss
200
Crss
0.000
0
4
8
12
16
20
ID - Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 8.4 A
8
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 8.4 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.04
ID = 8.4 A
0.03
TJ = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Document Number: 71114
S-31989—Rev. C, 13-Oct-03
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
www.vishay.com
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