SI4410BDY(2009) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4410BDY Datasheet PDF : 8 Pages
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Si4410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
2000
0.025
0.020
0.015
0.010
VGS = 4.5 V
VGS = 10 V
0.005
0.000
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 15 V
ID = 10 A
8
Ciss
1600
1200
800
Coss
400
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
VGS = 10 V
1.6
ID = 10 A
6
1.2
4
0.8
2
0.4
0
0
50
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
TJ = 150 °C
10
TJ = 25 °C
0.0
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
ID = 10 A
0.04
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72211
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
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