SI4110DY Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

SI4110DY

N-Channel 80-V (D-S) MOSFET

Vishay Semiconductors 

Si4110DY

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.04

TJ = 150 °C

0.03

10

0.02

TJ = 25 °C

1

0.01

TJ = 125 °C

TJ = 25 °C

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

5

0

4

5

6

7

8

9

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

150

4

120

ID = 250 µA

3

90

2

60

1

30

0

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0

0.01

0.1

1

10

Time (s)

Single Pulse Power, Junction-to-Ambient

100

Limited by RDS(on)*

10

100 µs

1 ms

10 ms

1

100 ms

0.1

TA = 25 °C

Single Pulse

0.01

1s

10 s

BVDSS Limited

DC

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

www.vishay.com

4

Document Number: 68766

S-81713-Rev. A, 04-Aug-08

Share Link: