SI4110DY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4110DY Datasheet PDF : 10 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
10
VGS = 10 thru 4 V
48
8
VGS = 6 V
36
6
Si4110DY
Vishay Siliconix
TC = - 55 °C
24
12
0
0
0.014
VGS = 5 V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
TC = 25 °C
2
TC = 125 °C
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
0.013
0.012
0.011
VGS = 10 V
0.010
0.009
0
12
24
36
48
60
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 11.7 A
8
6
VDS = 40 V
VDS = 64 V
4
2400
Ciss
1800
1200
Coss
600
Crss
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
2.1
ID = 11.7 A
1.8
1.5
VGS = 10 V
1.2
2
0.9
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68766
S-81713-Rev. A, 04-Aug-08
www.vishay.com
3
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