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SI4108DY Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание
производитель
SI4108DY
Vishay
Vishay Semiconductors Vishay
SI4108DY Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
Si4108DY
Vishay Siliconix
20
15
10
5
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
6
1.2
4
0.8
2
0.4
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68635
S-81195-Rev. A, 26-May-08
www.vishay.com
5

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