SI4108DY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4108DY Datasheet PDF : 10 Pages
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Si4108DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.04
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.0
4
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.00
0
4
8
12
16
20
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
150
120
3
ID = 250 µA
90
2
60
1
30
0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
1
100 µs
1 ms
10 ms
100 ms
0.1
1s
TA = 25 °C
Single Pulse
0.01
10 s
BVDSS
Limited
DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 68635
S-81195-Rev. A, 26-May-08
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