SI3451DV(2007) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3451DV Datasheet PDF : 7 Pages
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Si3451DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
10
TA = 150 °C
TA = 25 °C
1
0.36
ID = 2.6 A
0.28
0.20
0.12
TA = 125 °C
0.1
0.00
0.2 0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.1
1.0
ID = 250 µA
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
*rDS(on) Limited
10
1
0.1
TA = 25 °C
0.01
Single Pulse
TA = 25 °C
0.04
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
8
6
TA = 25 °C
Single Pulse
4
2
0
0.01
0.1
1
10
100 600
Time (sec)
Single Pulse Power
10 ms
100 ms
1s
10 s
dc
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4
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
*VGS minimum VGS at which rDS(on) is specified
Safe Operating Area
Document Number: 73701
S-71597-Rev. B, 30-Jul-07
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