SI3456DDV-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

SI3456DDV-T1-GE3

N-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

AN823

Vishay Siliconix

255 − 260_C

10 s (max)

1X4_C/s (max)

140 − 170_C

3_C/s (max)

60-120 s (min)

Pre-Heating Zone

217_C

60 s (max)

Reflow Zone

Maximum peak temperature at 240_C is allowed.

FIGURE 3. Solder Reflow Temperature and Time Durations

3-6_C/s (max)

THERMAL PERFORMANCE

A basic measure of a device’s thermal performance is the

junction-to-case thermal resistance, Rqjc, or the

junction-to-foot thermal resistance, Rqjf. This parameter is

measured for the device mounted to an infinite heat sink and

is therefore a characterization of the device only, in other

words, independent of the properties of the object to which the

device is mounted. Table 1 shows the thermal performance

of the TSOP-6.

TABLE 1.

Equivalent Steady State Performance—TSOP-6

Thermal Resistance Rqjf

30_C/W

SYSTEM AND ELECTRICAL IMPACT OF

TSOP-6

In any design, one must take into account the change in

MOSFET rDS(on) with temperature (Figure 4).

On-Resistance vs. Junction Temperature

1.6

VGS = 4.5 V

ID = 6.1 A

1.4

1.2

1.0

0.8

0.6

−50 −25 0

25 50 75 100 125 150

TJ − Junction Temperature (_C)

FIGURE 4. Si3434DV

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Document Number: 71743

27-Feb-04

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