SI3456DDV-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3456DDV-T1-GE3 Datasheet PDF : 11 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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Si3456DDV
Vishay Siliconix
6
4
2
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
3.5
1.5
2.8
1.2
2.1
0.9
1.4
0.6
0.7
0.3
0.0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power Derating (TC)
0.0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Power Derating (TA)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69075
S09-1399-Rev. B, 20-Jul-09
www.vishay.com
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