SI3456DDV-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

SI3456DDV-T1-GE3

N-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

New Product

Si3456DDV

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.10

0.08

10

0.06

TJ = 150 °C

TJ = 25 °C

0.04

1

0.02

TJ = 125 °C

TJ = 25 °C

0.1

0.0

0.3

0.6

0.9

1.2

1.5

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

2.3

0.00

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

25

2.1

20

1.9

ID = 250 µA

15

1.7

10

1.5

1.3

5

1.1

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0

0.001 0.01

0.1

1

10

100

Time (s)

Single Pulse Power

100

Limited by RDS(on)*

10

100 µA

1

1 ms

0.1

TA = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 ms

1 s, 10 s

DC

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

www.vishay.com

4

Document Number: 69075

S09-1399-Rev. B, 20-Jul-09

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