SI3456DDV-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3456DDV-T1-GE3 Datasheet PDF : 11 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
VGS = 10 V thru 4 V
4
15
3
10
2
5
VGS = 3 V
1
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.06
0
0
400
0.05
300
VGS = 4.5 V
0.04
200
VGS = 10 V
0.03
100
Si3456DDV
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
Coss
0.02
0
5
10
15
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 5.0 A
8
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.7
VGS = 10 V; ID = 5.0 A
1.5
6
VDS = 15 V
VDS = 24 V
4
2
1.3
1.1
VGS = 4.5 V; ID = 4.5 A
0.9
0
0
1
2
3
4
5
6
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69075
S09-1399-Rev. B, 20-Jul-09
www.vishay.com
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