SI3454ADV-T1 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3454ADV-T1 Datasheet PDF : 4 Pages
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Si3454ADV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
600
Capacitance
0.15
500
Ciss
400
0.10
0.05
VGS = 4.5 V
VGS = 10 V
0.00
0
4
8
12
16
20
ID − Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 4.5 A
8
6
4
2
300
200
Coss
100
Crss
0
0
6
12
18
24
30
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6
ID = 4.5 A
1.4
1.2
1.0
0.8
0
0
2
4
6
8
10
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
ID = 4.5 A
0.10
TJ = 25_C
0.05
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD − Source-to-Drain Voltage (V)
Document Number: 71108
S-40424—Rev. C, 15-Mar-04
0.00
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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