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SI3241 Просмотр технического описания (PDF) - Silicon Laboratories

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Компоненты Описание
производитель
SI3241 Datasheet PDF : 2 Pages
1 2
Si3241/Si3206/Si3203
Quad ProSLIC® Programmable CMOS SLIC/Codec
Selected Electrical Specifications
Parameter
Ambient Temperature
Supply Voltage, Si324x
Supply Voltage, Si3206/3
High Battery Voltage, Si3206/3
Low Battery Voltage
Maximum Loop Resistance
(loop + load)
DC Differential Output
Resistance
Idle Channel Noise
PSRR from VDD
Longitudinal to Metallic/PCM
Balance (forward or reverse)
Metallic/PCM to Longitudinal Balance
Longitudinal Impedance
Longitudinal Current per Pin
DC Current
2-Wire Return Loss
Transhybrid Balance
Thermal Resistance, (eTQFP-100)
Continuous Power Dissipation,
(eTQFP-100)
Thermal Resistance (QFN-40)
Continuous Power Dissipation
(QFN-40)
Symbol
TA
VDD
VDD
VBATH
VBATL
RLOOP
RDO
θJA
PD
θJA
PD
Test Condition
F-Grade
G-Grade
ILOOP=18 mA, VBAT = –48 V
ILOOP < ILIM
C-Message weighted
RX and TX, dc to 3.4 kHz
200 Hz to 1 kHz
1 kHz to 3.4 kHz
200 Hz to 3.4 kHz
200 Hz to 3.4 kHz at
TIP or RING
Active off-hook
200 Hz to 3.4 kHz
VTR = 0 V
200 Hz to 3.4 kHz
300 Hz to 3.4 kHz
TA = 85 °C
TA = 85 °C
100
PIN 1
DESIGNATOR
1
A2
e
L
Package Information
D
MM
D1
Min Typ Max
A — — 1.20
A1 0.05 — 0.15
A2 0.95 — 1.05
b 0.17 0.22 0.27
D — 16.00 —
E1 E
D1 — 14.00 —
e — 0.50 —
E — 16.00 —
E1 — 14.00 —
Bottom Side
Exposed Pad
5.0 x 5.0 mm
A
b
A1
Min Typical
Max
Unit
0
25
70
°C
–40
25
85
°C
3.13
3.3
3.47
V
3.13
3.3
3.47
V
–9
— –135/–110 V
–9
VBATH
V
2000
Ω
160
640
Ω
8
40
58
63
53
58
40
50
10
dBrnC
dB
dB
dB
dB
Ω
30
mApk
26
30
26
30
25
1.6
50
mA
dB
dB
°C/W
W
32
1.7
°C/W
W
100-Pin ETQFP
MM
Min Typ Max
A 0.80 0.90 1.00
A1 0.00 0.02 0.05
b 0.18 0.25 0.30
D
6.00 BSC
D2 4.10 4.30 4.40
e
0.50 BSC
E
6.00 BSC
E2 4.10 4.30 4.40
L 0.30 0.40 0.50
L1 0.03 0.05 0.08
aaa — — 0.10
bbb — — 0.10
ccc — — 0.08
ddd — — 0.10
40-Pin QFN
ProSLIC
Copyright © 2007 by Silicon Laboratories
7.17.07
Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc.
Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders

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