SI3200 Просмотр технического описания (PDF) - Silicon Laboratories

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SI3200

DUAL PROSLIC® PROGRAMMABLE CMOS SLIC/CODEC

Silicon Laboratories 

Si3220/25 Si3200/02

Table 4. 5 V Power Supply Characteristics1

(VDD, VDD1 – VDD4 = 5 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)

Parameter

Symbol

Test Condition

Min Typ Max Unit

VDD1 – VDD4 Supply

IVDD1–IVDD4

Current (Si3220/Si3225)

Sleep mode, RESET = 0

Open (high-impedance)

—

1

— mA

—

22

— mA

Active on-hook standby

—

21

— mA

Forward/reverse active off-hook

— 62 + — mA

ILIM +

ABIAS

Forward/reverse active OHT

OBIAS = 4 mA

—

65

— mA

VDD Supply Current

(Si3200/2)

IVDD

Ringing, VRING = 45 Vrms,

VBAT = –70 V, 1 REN load2

Sleep mode, RESET = 0

Open (high-impedance)

—

31

— mA

—

110

—

µA

—

110

—

µA

Active on-hook standby

—

110

—

µA

Forward/reverse active off-hook,

ABIAS = 4 mA, VBAT = –24 V

—

110

—

µA

Forward/reverse OHT, OBIAS = 4 mA,

VBAT = –70 V

—

110

—

µA

Ringing, VRING = 45 Vrms,

VBAT = –70 V,

1 REN load

—

110

—

µA

Notes:

1. All specifications are for a single channel based on measurements with both channels in the same operating state.

2. See "3.14.4. Ringing Power Considerations" on page 54 for current and power consumption under other operating

conditions.

3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must

include an additional (VDD + |VBAT|) x ILOOP term.

Rev. 1.3

9

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