SI2301BDS-T1-GE3(2008) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI2301BDS-T1-GE3 Datasheet PDF : 6 Pages
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Si2301BDS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
VDS ≤ - 5 V, VGS = - 2.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 2.8 A
VGS = - 2.5 V, ID = - 2.0 A
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 2.8 A
Diode Forward Voltage
VSD
IS = - 0.75 A, VGS = 0 V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = - 6 V, VGS = - 4.5 V
ID ≅ - 2.8 A
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Switchingc
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
Rg = 6 Ω
Notes:
a. Pulse test: pulse width ≤ 300 µs duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Limits
Min.
Typ.
Max.
Unit
- 20
- 0.45
V
- 0.95
± 100
nA
-1
µA
- 10
-6
A
-3
0.080 0.100
Ω
0.110 0.150
6.5
S
- 0.80
- 1.2
V
4.5
10
0.7
nC
1.1
375
95
pF
65
20
30
40
60
ns
30
45
20
30
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72066
S-80427-Rev. D, 03-Mar-08
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