SGM2014 Просмотр технического описания (PDF) - Sony Semiconductor
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SGM2014 Datasheet PDF : 5 Pages
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Electrical Characteristics
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
Symbol
Condition
VDS = 12V
IDSX
VG1S = –4V
VG2S = 0V
IG1SS
VG1S = –4.5V
VG2S = 0V
VDS = 0V
IG2SS
VG2S = –4.5V
VG1S = 0V
VDS = 0V
VDS = 5V
IDSS
VG1S = 0V
VG2S = 0V
VDS = 5V
VG1S (OFF) ID = 100µA
VG2S = 0V
VDS = 5V
VG2S (OFF) ID = 100µA
VG1S = 0V
VDS = 5V
gm
ID = 10mA
VG2S =1.5V
f = 1kHz
Ciss
Crss
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
NF
VDS = 5V
ID = 10mA
Ga
VG2S = 1.5V
f = 900MHz
SGM2014AM
(Ta = 25°C)
Min.
Typ.
Max. unit
50 µA
–8 µA
–8 µA
8
28 mA
–2.5 V
–2.5 V
13
17
ms
0.9
2
pF
25
50
fF
1.5
2.5 dB
15
18
dB
Typical Characteristics (Ta = 25°C)
ID vs. VDS
40
(VG2S = 1.5V)
30
20
10
0
0
1
2
3
4
5
VDS – Drain to source voltage [V]
VG1S
= 0V
–0.3V
–0.6V
–0.9V
–1.2V
–1.5V
6
–2–
25
(VDS = 5V)
ID vs. VG1S
20
VG2S
= 1.5V
1.0V
0.5V
0V
15
10
5
0
–2.0
–1.5
–1.0
–0.5
VG1S – Gate 1 to source voltage [V]
–0.5V
–1.0V
–1.5V
0
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