SGH30N60RUFD Просмотр технического описания (PDF) - Fairchild Semiconductor
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SGH30N60RUFD Datasheet PDF : 8 Pages
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10000
Common Emitter
VGE = ± 15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
1000
Eoff
Eon
Eoff
100
15
30
45
60
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
10Ω
12 TC = 25℃
V = 100 V
CC
9
300 V
200 V
6
3
0
0
20
40
60
80
100
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
200
100 IC MAX. (Pulsed)
IC MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
V = 20V, T = 100℃
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH30N60RUFD Rev. B1
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