SGD02N60 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

SGD02N60

Fast IGBT in NPT-technology

Infineon Technologies 

SGP02N60,

SGB02N60

SGD02N60

25V

20V

C iss

100pF

15V

120V

480V

10V

5V

0V

0nC

5nC

10nC

15nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 2A)

25µs

Coss

10pF

Crss

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

40A

20µs

30A

15µs

20A

10µs

10A

5µs

0µs

10V 11V 12V 13V 14V 15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 600V, start at Tj = 25°C)

0A

10V 12V 14V 16V 18V 20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(VCE ≤ 600V,Tj = 150°C)

8

Jul-02

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