SGD02N60 Просмотр технического описания (PDF) - Infineon Technologies

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SGD02N60

Fast IGBT in NPT-technology

Infineon Technologies 

SGP02N60,

SGB02N60

SGD02N60

Fast IGBT in NPT-technology

• 75% lower Eoff compared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

C

G

E

P-TO-252-3-1 (D-PAK) P-TO-220-3-1

(TO-252AA)

(TO-220AB)

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

Type

SGP02N60

SGB02N60

SGD02N60

VCE

IC

VCE(sat)

Tj

Package

Ordering Code

600V 2A

2.2V

150°C TO-220AB

Q67040-S4504

TO-263AB

Q67040-S4505

TO-252AA(DPAK) Q67041-A4707

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 150°C

Gate-emitter voltage

Avalanche energy, single pulse

IC = 2 A, VCC = 50 V, RGE = 25 Ω ,

start at Tj = 25°C

Short circuit withstand time1)

VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

Symbol

VCE

IC

ICpuls

-

VGE

EAS

tSC

Ptot

Tj , Tstg

Value

Unit

600

V

A

6.0

2.9

12

12

±20

V

13

mJ

10

µs

30

W

-55...+150

°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Jul-02

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