G02N60(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

G02N60
(Rev.:2006)

Fast IGBT in NPT-technology

Infineon Technologies 

SGB02N60

Fast IGBT in NPT-technology

• 75% lower Eoff compared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Qualified according to JEDEC2 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C

G

E

PG-TO-263-3-2 (D²-PAK)

(TO-263AB)

Type

SGB02N60

VCE

600V

IC

VCE(sat)150°C

Tj

2A

2.2V

150°C

Marking

G02N60

Package

PG-TO-263-3-2

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 150°C

Gate-emitter voltage

Avalanche energy, single pulse

IC = 2 A, VCC = 50 V, RGE = 25 Ω ,

start at Tj = 25°C

Short circuit withstand time1)

VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

Soldering temperature (reflow soldering, MSL1)

Symbol

VCE

IC

ICpuls

-

VGE

EAS

tSC

Ptot

Tj , Tstg

Value

Unit

600

V

A

6.0

2.9

12

12

±20

V

13

mJ

10

µs

30

W

-55...+150

°C

245

2 J-STD-020 and JESD-022

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Rev. 2.3 Nov 06

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