G02N60(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

G02N60
(Rev.:2006)

Fast IGBT in NPT-technology

Infineon Technologies 

SGB02N60

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses

10

Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH

an d Stray capacity Cσ =180pF.

Rev. 2.3 Nov 06

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