SFP9620 Просмотр технического описания (PDF) - Fairchild Semiconductor
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SFP9620 Datasheet PDF : 7 Pages
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Advanced Power MOSFET
SFP9620
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : -10 µA (Max.) @ VDS = -200V
Low RDS(ON) : 1.111 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
O1
Peak Diode Recovery dv/dt
O3
Total Power Dissipation (TC=25oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = -200 V
RDS(on) = 1.5 Ω
ID = -3.5 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
-200
-3.5
-2.2
-14
+_ 30
327
-3.5
3.8
-5.0
38
0.3
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
3.29
--
62.5
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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