SFH608 Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
SFH608
Vishay Semiconductors
SFH608 Datasheet PDF : 8 Pages
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SFH608
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
6.0
V
DC Forward current
IF
50
mA
Surge forward current
t ≤ 10 µs
IFSM
2.5
A
Total power dissipation
Pdiss
70
mW
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter voltage
VCE
55
V
Collector-base voltage
VCBO
55
V
Emitter-base voltage
VEBO
7.0
V
Collector current
IC
50
mA
Surge collector current
tp ≤ 1.0 ms
100
mA
Total power dissipation
Pdiss
150
mW
Coupler
Parameter
Isolation test voltage (between
emitter and detector, refer to
climate DIN 40046 part 2
Nov. 74)
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Test condition
t = 1.0 s
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Operating temperature range
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Symbol
VISO
RIO
RIO
Tstg
Tamb
Tsld
Value
5300
≥ 7.0
≥ 7.0
175
≥ 1012
≥ 1011
- 55 to + 150
- 55 to + 100
260
Unit
VRMS
mm
mm
Ω
Ω
°C
°C
°C
www.vishay.com
2
Document Number 83664
Rev. 1.4, 26-Oct-04
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