SFH601-1X016(2013) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
SFH601-1X016
(Rev.:2013)
(Rev.:2013)
Vishay Semiconductors
SFH601-1X016 Datasheet PDF : 10 Pages
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SFH601
Vishay Semiconductors
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
isfh601_13
VCEsat = f (IC)
IF = 3 x IC
101
102
IC (mA)
Fig. 13 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
isfh601_14
VCEsat = f (IC)
101
IC (mA)
IF = 2 x IC
IF = 3 x IC
102
Fig. 14 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-2
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
isfh601_15
VCEsat = f (IC)
IF = IC
IF = 2 x IC
IF = 3 x IC
5 101
IC (mA)
5 102
Fig. 15 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-3
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
isfh601_16
VCEsat = f (IC)
5 101
IC (mA)
IF = IC
IF = 2 x IC
IF = 3 x IC
5 102
Fig. 16 - Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-4
104
D=0
0.005
0.01
0.02
0.05
tp
D= tp
T
IF
T
103
0.1
102
0.2
0.5
DC
D = parameter, IF = f(tp)
101
10- 5 10- 4 10- 3 10- 2 10- 1 100
101
isfh601_17
tp (s)
Fig. 17 - Permissible Pulse Load
200
Ptot = f (TA)
150
Transistor
100
Diode
50
0
0
isfh601_18
25
50
75
100
TA (°C)
Fig. 18 - Permissible Power Dissipation for Transistor and Diode
Rev. 1.5, 19-Aug-13
6
Document Number: 83663
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