SFH601-4X016(2013) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
SFH601-4X016
(Rev.:2013)
(Rev.:2013)
Vishay Semiconductors
SFH601-4X016 Datasheet PDF : 10 Pages
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SFH601
Vishay Semiconductors
103
DC
TA = 75 °C, VCE = 5.0 V)
5
Pulsbetrieb
Pulse
IC/IF = f (IF)
4
3
102
2
1
5
100
10-1
isfh601_07
5 100
5 101 2
IF (mA)
Fig. 7 - Current Transfer Ratio vs. Diode Current
103
5
102
5
101
- 25
isfh601_08
DC
Pulsbetrieb
Pulse
4
3
2
1
(IF = 10 mA, VCE = 5.0 V)
IC/IF = f (T)
0
25
TA(°C)
50 °C 75
Fig. 8 - Current Transfer Ratio vs. Diode Current
30
DC
Pulsbetrieb
Pulse
20
IB = 40 µA
IB = 30 µA
10
0
0
isfh601_09
IC = f (VCE)
(IF = 0)
IB = 20 µA
IB = 10 µA
IB = 5 µA
IB = 2 µA
5
10
15
VCE
Fig. 9 - Transistor Characteristics
30
20
10
0
0
isfh601_10
DC
Pulsbetrieb
Pulse
IF = ± 14 mA
IF = ± 12 mA
IF = ± 10 mA
IC = f (VCE)
IF = ± 1 mA
IF = ± 8 mA
IF = ± 6 mA
IF = ± 4 mA
IF = ± 2 mA
5
10
15
VCE
Fig. 10 - Output Characteristics
1.2
25°
50°
75°
1.1
1.0
0.9
10- 1
100
101
102
isfh601_11
IF (mA)
Fig. 11 - Forward Voltage
100
5
10-1
5
ICEO = f (V, T)
(IF = 0)
VCE = 40 V
VCE = 10 V
10-2
5
10-3
- 25 0
isfh601_12
25
50
TA (°C)
75 100
Fig. 12 - Collector Emitter Off-state Current
Rev. 1.5, 19-Aug-13
5
Document Number: 83663
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