SFH601(2004) Просмотр технического описания (PDF) - Vishay Semiconductors
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SFH601 Datasheet PDF : 9 Pages
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SFH601
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
6.0
V
DC forward current
IF
60
mA
Surge forward current
t =10 µs
IFSM
2.5
A
Total power dissipation
Pdiss
100
mW
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter voltage
VCE
100
V
Emitter-base voltage
VEBO
7.0
V
Collector current
IC
50
mA
t = 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
Coupler
Parameter
Test condition
Symbol
Isolation test voltage 1)
t = 1.0 s
VISO
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking 2)
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
VIO = 500 V, Tamb = 100 °C
RIO
Storage temperature range
Tstg
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Tamb
Tj
Tsld
1) between emitter and detector referred to climate DIN 40046, part 2, Nov. 74
2) index per DIN IEC 60112/VDE0303, part 1
Value
5300
≥ 7.0
≥ 7.0
≥ 0.4
175
≥ 1012
≥ 1011
- 55 to + 150
- 55 to + 100
100
260
Unit
VRMS
mm
mm
mm
Ω
Ω
°C
°C
°C
°C
www.vishay.com
2
Document Number 83663
Rev. 1.4, 26-Oct-04
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