SFH601(2004) Просмотр технического описания (PDF) - Vishay Semiconductors
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SFH601 Datasheet PDF : 9 Pages
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VISHAY
SFH601
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
Test condition
IF = 60 mA
IR = 10 µA
VR = 6.0 V
VF = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.25
1.65
V
VBR
6.0
V
IR
0.01
10
µA
CO
25
pF
Rthja
750
K/W
Output
Parameter
Collector-emitter capacitance
Collector - base capacitance
Emitter - base capacitance
Thermal resistance
Collector-emitter leakage
current
Test condition
f = 1.0 MHz, VCE = 5.0 V
f = 1.0 MHz, VCB = 5.0 V
f = 1.0 MHz, VEB = 5.0 V
VCE = 10 V
Part
Symbol Min
Typ.
Max
Unit
CCE
6.8
pF
CCB
8.5
pF
CEB
11
pF
RTHJamb
500
K/W
SFH601-1
ICEO
2.0
50
nA
SFH601-2
SFH601-3
SFH601-4
ICEO
ICEO
ICEO
2.0
50
nA
5.0
100
nA
5.0
100
nA
Coupler
Parameter
Saturation voltage, collector-
emitter
Capacitance (input-output)
Test condition
IF = 10 mA, IC = 2.5 mA
VI-O = 0 , f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VCEsat
0.25
0.4
V
CIO
0.6
pF
Current Transfer Ratio
Current Transfer Ratio and Collector-Emitter Leakage Current by Dash Number
Parameter
Test condition
Part
Symbol Min
Typ.
Max
Unit
IC/IF at VCE = 5.0 V
IF = 10 mA
SFH601-1 CTR
40
SFH601-2 CTR
63
80
%
125
%
SFH601-3 CTR
100
200
%
SFH601-4 CTR
160
320
%
IF = 1.0 mA
SFH601-1 CTR
13
30
%
SFH601-2 CTR
22
45
%
SFH601-3 CTR
34
70
%
SFH601-4 CTR
56
90
%
Document Number 83663
Rev. 1.4, 26-Oct-04
www.vishay.com
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