IXFN25N90 Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXFN25N90 Datasheet PDF : 4 Pages
| |||
Figure 7. Gate Charge
15
VDS = 500 V
12
ID = 13 A
IG = 10 mA
9
6
3
0
0 50 100 150 200 250 300 350
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic Diode
50
45
40
35
30
25
TJ = 125oC
20
TJ = 25oC
15
10
5
0
0.0
0.3
0.6
0.9
1.2
1.5
VSD - Volts
IXFN25N90
IXFN26N90
Figure 8. Capacitance Curves
20000
Ciss
10000
f = 1MHz
1000
Coss
Crss
100
0
5 10 15 20 25 30 35 40
VDS - Volts
30
IXFN26N90
25
IXFN25N90
20
15
10
5
0
-50 -25
0 25 50 75 100 125 150
Case Temperatue - oC
0.300
0.100
0.010
0.001
10-4
10-3
10-2
10-1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
100
101
IXYS REF: F_26N90(9X)12-09-08
Share Link: 