IXCY01N90E Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
IXCY01N90E Datasheet PDF : 3 Pages
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Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
∆IA(P)/∆T
VDS = 20 V; ID = 100 mA, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 500 V, ID = 50 mA
VGS = 10 V, RG = 50 Ω (External)
VGS = 10 V, VDS = 500 V, ID = 50 mA
Plateau Current Shift VDS= 10 V, VGS= 10 V
with Temperature
40 mS
133
pF
24
pF
6.6
pF
15
ns
137
ns
11
ns
131
ns
7.5
nC
2.2
nC
3.0
nC
±50
ppm/K
∆VAK/∆ IA(p)
Dynamic Resistance
V=
DS
20 V, V = 10 V
GS
125
kΩ
VF
IF = 50mA
1.8 V
RthJC
RthCA
TO-220
TO-251/252
3.1 K/W
80
K/W
100
K/W
IXCP 01N90E
IXCY 01N90E
TO-220 AB Dimensions
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
TO-252 AA Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
Dim. Millimeter
Inches
Min. Max.Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2
0 0.13
0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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