SEMB1 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

SEMB1

PNP Silicon Digital Transistor Array

Infineon Technologies 

SEMB1

DC Current Gain hFE = f (IC)

VCE = 5V (common emitter configuration)

10 3

-

10 2

10 1

Collector-Emitter Saturation Voltage

VCEsat = f (IC), hFE = 20

10 2

mA

10 1

10

0

10

-1

10 0

10 1

mA 10 2

IC

Input on Voltage Vi(on) = f (IC)

VCE = 0.3V (common emitter configuration)

10 0

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1

VCEsat

Input off voltage Vi(off) = f (IC)

VCE = 5V (common emitter configuration)

10 2

mA

10 1

mA

10 1

10 0

10 0

10 -1

10

-1

10

-1

10 0

10 1

V

10 2

Vi(on)

10 -2

0

0.5

1

1.5

2

V

3

Vi(off)

3

Feb-25-2004

Share Link: