SEMH4(2004) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SEMH4
(Rev.:2004)

NPN Silicon Digital Transistor

Infineon Technologies 

BCR129.../SEMH4

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Input on voltage

Collector current

Total power dissipation-

BCR129, TS ≤ 102°C

BCR129F, TS ≤ 128°C

BCR129L3, TS ≤ 135°C

BCR129S, TS ≤ 115°C

BCR129T, TS ≤ 109°C

BCR129W, TS ≤ 124°C

SEMH4, TS ≤ 75°C

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point1)

BCR129

BCR129F

BCR129L3

BCR129S

BCR129T

BCR129W

SEMH4

Symbol

VCEO

VCBO

VEBO

Vi(on)

IC

Ptot

Tj

Tstg

Symbol

RthJS

Value

50

50

5

20

100

200

250

250

250

250

250

250

150

-65 ... 150

Value

≤ 240

≤ 90

≤ 60

≤ 140

≤ 165

≤ 105

≤ 300

1For calculation of RthJA please refer to Application Note Thermal Resistance

Unit

V

mA

mW

°C

Unit

K/W

2

May-17-2004

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