11EQS09 Просмотр технического описания (PDF) - Nihon Inter Electronics

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производитель

11EQS09

Schottky Barrier Diode

Nihon Inter Electronics 

SBD Type :11EQS09

FEATURES

* Miniature Size

* Low Forward Voltage Drop

* High Surge Capability

* 30volts trough 100volts Types Available

* 26mm and 52mm Inside Tape Spacing Package Available

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.17g

Rating

Symbol

11EQS09

Repetitive Peak Reverse Voltage

Without Fin or

Average Rectified P.C.Board

Output Current P.C.Board

Mounted *

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

VRRM

IO

IF(RMS)

IFSM

Tjw

Tstg

90

1.0 Ta=30°C 50Hz Half Sine Wave

1.0 Ta=55°C Resistive Load

1.57

40 Half Sine Wave,1cycle,Non-repetitive

- 40 to + 150

- 40 to + 150

Electrical • Thermal Characteristics

Unit

V

A

A

A

°C

°C

Characteristics

Symbol

Conditions

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance(Junction to Ambient)

* :Print Lands = 5x5 mm,Both Sides

IRM Tj= 25°C, VRM= VRRM

VFM Tj= 25°C, IFM= 1 A

Rth(j-a)

Without Fin or P.C.Board

P.C.Board mounted *

Min Typ

--

--

--

Max

0.5

0.85

140

110

Unit

mA

V

°C/W

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