SD2931-10(2004) Просмотр технического описания (PDF) - STMicroelectronics

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SD2931-10
(Rev.:2004)

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

STMicroelectronics 

SD2931-10

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

• GOLD METALLIZATION

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 150 W MIN. WITH 14 dB GAIN @

175 MHz

• THERMALLY ENHANCED PACKAGING FOR

LOWER JUNCTION TEMPERATURES

DESCRIPTION

The SD2931-10 is a gold metallized N-Channel

MOS field-effect RF power transistor. Being

electrically identical to the standard SD2931

MOSFET, it is intended for use in 50 V dc large

signal applications up to 230 MHz.

The SD2931-10 is mechanical compatible to the

SD2931 but offers in addition a better thermal

capability (25 % lower thermal resistance),

representing the best-in-class transistors for ISM

applications, where reliability and ruggedness are

critical factors.

M174

epoxy sealed

PIN CONNECTION

4

1

3

1. Drain

2. Source

2

3. Gate

4. Source

ORDER CODES

Order Codes

SD2931-10

Marking

SD2931-10

Package

M174

ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)

Symbol

Parameter

V(BR)DSS Drain Source Voltage

VDGR

Drain-Gate Voltage (RGS = 1MΩ)

VGS

Gate-Source Volatge

ID

Drain Current

PDISS

Power Dissipation

Tj

Max. Operating Junction Temperature

TSTG

Storage Temperature

THERMAL DATA

Rth(j-c) Junction -Case Thermal Resistance

July 2004

Packaging

Plastic Tray

Value

Unit

125

V

125

V

±20

V

20

A

389

W

200

°C

-65 to +150

°C

0.45

°C/W

REV. 4

1/10

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