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SC1205H

High Speed Synchronous Power MOSFET Driver

Semtech Corporation 

SC1205H

POWER MANAGEMENT

PRELIMINARY

Absolute Maximum Ratings

Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified

in the Electrical Characteristics section is not implied.

Parameter

Symbol

Conditions

Maximum

Units

VCC Supply Voltage

BST to PGND

BST to DRN

DRN to PGND

DRN to PGND Pulse

EN to PGND

Input Pin

VIMAXSW

11

V

VMAXBST-PGND

30

V

VMAXBST-DRN

11

V

VMAXDRN-PGN

-2 to 25

V

VMAXPULSE

tPULSE < 100ns

-5 to 25

V

t < 20ns

PULSE

-10 to 25

VMAXOVP S-PGND

12

V

CO

-0.3 to 12

V

Continuous Power Dissipation

PD

Thermal Resistance Junction to Case

θJC

Thermal Resistance Junction to Ambient

θJA

Operating Temperature Range

TJ

Storage Temperature Range

T

STG

Lead Temperature (Soldering) 10 Sec.

TLEAD

Note:

(1) Specification refers to application circuit in Figure 1.

Tamb = 25°C, TJ = 125°C

0.66

Tcase = 25°C, TJ =125°C

2.56

40

150

0 to +125

-65 to +150

300

W

°C/W

°C/W

°C

°C

°C

Electrical Characteristics

Unless specified: -0 < θJ < 125°C; VCC = 5V; 4V < VBST < 26V

Parameter

Symbol

Conditions

Min

Power Supply

Supply Voltage

Quiescent Current, Operating

Quiescent Current

VCC

VCC

4.2

Iq_op

VCC = 5V, CO = OV

Iq_stby

EN = OV

Under Voltage Lockout

Start Threshold

VSTART

4.2

Hysteresis

VhysUVLO

Typ

5

1

4.4

0.05

Max

9.0

10

4.75

Units

V

mA

µA

V

V

 2002 Semtech Corp.

2

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