SA631DK Просмотр технического описания (PDF) - Philips Electronics

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производитель

SA631DK

1GHz low voltage LNA and mixer

Philips Electronics 

Philips Semiconductors

1GHz low voltage LNA and mixer

Product specification

SA631

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0V, Tamb = 25°C; RFIN = 881MHz, fVCO = 964MHz; unless otherwise stated.

SYMBOL

PARAMETER

TEST CONDITIONS

Low Noise Amplifier

fRF

S21

S21

∆S21/∆T

∆S21/∆f

S12

S11

S22

P-1dB

IP3

RF input frequency range

Amplifier gain

Amplifier gain in power-down mode

Gain temperature sensitivity enabled

Gain frequency variation

Amplifier reverse isolation

Amplifier input match

Amplifier output match

Amplifier input 1dB gain compression

Amplifier input third order intercept

NF

Amplifier noise figure

tON

tOFF

Mixer

Amplifier turn-on time (Enable Lo → Hi)

Amplifier turn-off time (Enable Hi → Lo)

PGC

Mixer power conversion gain: RP = RL = 1.2kΩ

S11M

Mixer input match

NFM

Mixer SSB noise figure

P-1dB

Mixer input 1dB gain compression

IP3M

Mixer input third order intercept

IP2INT

Mixer input second order intercept

PRFM-IF Mixer RF feedthrough

PLO-IF

LO feedthrough to IF

PLO-RFM LO to mixer input feedthrough

PLO-RF LO to LNA input feedthrough

Overall System

GSYS

System gain

800MHz - 1.0GHz

@ 881 MHz

With ext. impedance matching

fRF = 881MHz, fLO = 964MHz,

fIF = 83MHz

Ext. impedance matching req.

RFIN = –32dBm

LO = –0dBm

LNA + Mixer

LIMITS

–3s

TYP

+3s

UNITS

800

1000

MHz

15

dB

–28

dB

0.006

dB/°C

±0.013

dB/MHz

–28

dB

–10

dB

–10

dB

–20

dBm

–7

dBm

1.7

dB

120

µs

0.3

µs

9.6

–10

10

–14.5

3.3

38

–45

–23

–32

–42

dB

dB

dB

dBm

dBm

dBm

dBm

dBm

dBm

dBm

23.9

24.6

25.3

dB

1998 Jan 08

4

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