SA5211 Просмотр технического описания (PDF) - Philips Electronics
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SA5211 Datasheet PDF : 28 Pages
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Philips Semiconductors
SA5211
Transimpedance amplifier (180 MHz)
NE5211 Gain vs Frequency
17
16
5.5V
15
14
5.0V
13
12
11
TPRAILN==125250°WC
4.5V
10
9
80.1
1
10
100
FREQUENCY (MHz)
NE5211 Gain vs Frequency
17
16
5.5V
15
14
13
12
11
10
TPRAILN==125450°WC
5.0V
4.5V
9
8
0.1
1
10
100
FREQUENCY (MHz)
NE5211 Differential Transresistance
vs Temperature
33
32
DC TESTED
RL = ¥
31
30
29 5.5V
28 5.0V
4.5V
2760 40 20 0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
NE5211 Gain vs Frequency
17
16
15
14
13
12
11
VPCINC1=2 5V
10
9
55°C
125°C
85°C
25°C
80.1
1
10
100
FREQUENCY (MHz)
NE5211 Gain vs Frequency
17
16
15
14
13
12
11
VPCINC1=4 5V
10
9
55°C
125°C
85°C
25°C
80.1
1
10
100
FREQUENCY (MHz)
NE5211 Typical
Bandwidth Distribution
(70 Parts from 3 Wafer Lots)
60
50
PSIINNG1L2E-ENDED
RL = 50W
TVACC=
= 5.0V
25°C
40
30
20
10
0
143 155 167 179 191 203
FREQUENCY (MHz)
NE5211 Bandwidth
vs Temperature
220
200 5.5V
5.0V
180 4.5V
PSIINNG1L2E-ENDED
RL = 50W
160
140
120
10060 40 20 0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
NE5211 Gain and Phase
Shift vs Frequency
17
16
15
14
13
12
11
10
9
PIN 12
TVAC=C2=55°CV
80.1
1
10
FREQUENCY (MHz)
120
60
0
60
120
100
NE5211 Gain and Phase
Shift vs Frequency
17
16
15
14
13
120
12
11
10
9
PIN 14
TVAC=C2=55°CV
270
80.1
1
10
100
FREQUENCY (MHz)
Fig 8. Typical performance characteristics. (cont.)
5, !!!
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
© Philips Electronics N.V. 2001. All rights reserved.
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