S9013W Просмотр технического описания (PDF) - Galaxy Semi-Conductor
Номер в каталоге
Компоненты Описание
производитель
S9013W Datasheet PDF : 4 Pages
| |||
NPN Silicon Epitaxial Planar Transistor
EATURES
z High Collector Current.(IC= 500mA）
z Complementary To S9012.
z Excellent HFE Linearity.
z Power dissipation.(PT=200mW)
Pb
Lead-free
APPLICATIONS
z High Collector Current.
Production specification
S9013W
ORDERING INFORMATION
Type No.
Marking
S9013W
J3
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
40
VCEO
Collector-Emitter Voltage
25
VEBO
Emitter-Base Voltage
5
IC
Collector Current -Continuous
500
PC
Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
℃
F011
Rev.A
www.gmicroelec.com
1
Share Link: 