S8551 Просмотр технического описания (PDF) - Hamamatsu Photonics
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S8551 Datasheet PDF : 2 Pages
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PHOTODIODE
Si photodiode
S8551, S8552, S8553
Photodiodes for VUV (Vacuum UV) detection
S8551, S8552 and S8553 are VUV (Vacuum UV) photodiodes suitable for detection of ArF excimer lasers (λ=193 nm). Designed to provide
optimal performance in the VUV range, these photodiodes offer more stable sensitivity even after long exposure to VUV radiation compared with
conventional types.
Features
l Reliable detection improves of ArF excimer laser
(λ=193 nm)
l Large active area
S8551: 5.8 × 5.8 mm
S8552: 10 × 10 mm
S8553: 18 × 18 mm
l Windowless package
S8551: TO-8 metal package
S8552: 16.5 × 15.0 mm ceramic package
S8553: 25.5 × 25.5 mm ceramic package
Applications
l ArF excimer laser detection
l Detection of various UV light sources
I Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.
5
V
Operating temperature
Topr
-20 to +60 *
°C
Storage temperature
Tstg
-55 to +80 *
°C
* No condensation
I Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition
S8551
Min. Typ.
P h oto sensitivity S λ=193 nm
45 60
Dark current
ID VR=10 mV
- 0.02
Terminal
capacitance
Ct VR=0 V, f=10 kHz -
1.0
Rise time
tr
VR=0 V, RL=1 kΩ
10 to 90 %
-
2
Max.
-
0.5
-
-
S8552
Min. Typ. Max.
45 60
-
- 0.05 1.0
-
4.0
-
-
9
-
S8553
Min. Typ. Max.
45 60
-
-
0.1 5.0
-
8.0
-
-
18
-
Unit
mA/W
nA
nF
µs
S8551, S8552 and S8553 use windowless packages with no protection on the photodiode chip. Always use the following
precautions when handling these photodiodes.
I Handling precautions
G Handle the photodiodes in a clean room.
G Never touch the photodiode chip surface and wire bonding.
G Wear dust-proof gloves and dust-proof mask.
G Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface.
G Do not clean the photodiodes by any method other than air blow.
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