S505 Просмотр технического описания (PDF) - Vishay Semiconductors
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S505 Datasheet PDF : 5 Pages
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S505T/S505TR/S505TRW
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
Value
Unit
VDS
8
V
ID
30
mA
±IG1/G2SM
10
mA
±VG1/G2SM
6
V
Ptot
200
mW
TCh
150
°C
Tstg
–55 to +150 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
m plated with 35 m Cu
RthChA
450
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source
m ID = 10 A, VG2S = VG1S = 0
breakdown voltage
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
+VG1S = 5 V, VG2S = VDS = 0
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
±VG2S = 5 V, VG1S = VDS = 0
W VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 220 k
m VDS = 5 V, VG2S = 4, ID = 20 A
W m VDS = VRG1 = 5 V, RG1 = 220 k , ID = 20 A
Symbol Min Typ Max Unit
V(BR)DSS 15
V
±V(BR)G1SS 7
10 V
±V(BR)G2SS 7
10 V
+IG1SS
20 nA
±IG2SS
20 nA
IDSO
10 13 18 mA
VG1S(OFF) 0.4
1.2 V
VG2S(OFF)
1.0
V
Remark on improving intermodulation behavior:
W W By setting RG1 smaller than 220 k , e.g., 180 k , typical value of IDSO will raise and improved intermodulation
behavior will be performed.
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
Document Number 85044
Rev. 3, 20-Jan-99
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