S3C72I9 Просмотр технического описания (PDF) - Samsung

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S3C72I9

The S3C72I9 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47

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ELECTRICAL DATA

S3C72I9/P72I9

Table 14-7. A.C. Electrical Characteristics

(TA = - 40 °C to + 85 °C, VDD = 1.8 V to 5.5 V)

Parameter

Symbol

Conditions

Min

Typ

Instruction Cycle

Time (note)

tCY

VDD = 2.7 V to 5.5 V

0.67

–

VDD = 2.0 V to 5.5 V

0.95

TCL0, TCL1 Input

Frequency

fTI0, fTI1 VDD = 2.7 V to 5.5 V

0

–

VDD = 2.0 V to 5.5 V

TCL0, TCL1 Input tTIH0, tTIL0 VDD = 2.7 V to 5.5 V

High, Low Width tTIH1, tTIL1

0.48

–

VDD = 2.0 V to 5.5 V

1.8

SCK Cycle Time

tKCY

VDD = 2.7 V to 5.5 V; Input

800

–

Internal SCK source; Output

650

VDD = 2.0 V to 5.5 V; Input

3200

Internal SCK source; Output

3800

SCK High, Low

tKH, tKL VDD = 2.7 V to 5.5 V; Input

325

–

Width

Internal SCK source; Output

tKCY/2-

50

VDD = 2.0 V to 5.5 V; Input

1600

Internal SCK source; Output

tKCY/2-

150

SI Setup Time to

tSIK

VDD = 2.7 V to 5.5 V; Input

100

–

SCK High

VDD = 2.7 V to 5.5 V; Output

150

VDD = 2.0 V to 5.5 V; Input

150

VDD = 2.0 V to 5.5 V; Output

500

SI Hold Time to

tKSI

VDD = 2.7 V to 5.5 V; Input

400

–

SCK High

VDD = 2.7 V to 5.5 V; Output

400

VDD = 2.0 V to 5.5 V; Input

600

VDD = 2.0 V to 5.5 V; Output

500

Max

Units

64

µs

64

1.5

MHz

1

–

µs

–

ns

–

ns

–

ns

–

ns

NOTE: Unless otherwise specified, Instruction Cycle Time condition values assume a main system clock ( fx ) source.

14-8

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