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S3C72I9 Просмотр технического описания (PDF) - Samsung

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S3C72I9 Datasheet PDF : 32 Pages
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ELECTRICAL DATA
S3C72I9/P72I9
Table 14-2. D.C. Electrical Characteristics (Concluded)
(TA = - 40 °C to + 85 °C, VDD = 1.8 V to 5.5 V)
Parameter Symbol
Conditions
Min
Supply
Current
IDD1 (2) VDD = 5 V ± 10%
6.0 MHz
Crystal oscillator
4.19 MHz
C1 = C2 = 22 pF
VDD = 3 V ± 10%
6.0 MHz
4.19 MHz
IDD2 (2)
Idle mode;
VDD = 5 V ± 10%
Crystal oscillator
C1 = C2 = 22 pF
6.0 MHz
4.19 MHz
VDD = 3 V ± 10%
6.0 MHz
4.19 MHz
IDD3 (3) VDD = 3 V ± 10%
32 kHz crystal oscillator
IDD4 (3) Idle mode; VDD = 3 V ± 10%
32 kHz crystal oscillator
IDD5 Stop mode;
VDD = 5 V ± 10%
Stop mode;
VDD = 3 V ± 10%
SCMOD =
0000B
XT = 0V
Stop mode;
VDD = 5 V ± 10%
SCMOD =
0100B
Stop mode;
VDD = 3 V ± 10%
Typ
5.1
3.9
2.5
1.8
1.3
1.2
0.5
0.44
22.8
6.4
2.5
0.5
0.2
0.1
Max
Units
10.0
mA
7.5
4.0
3.0
2.5
1.8
1.5
1.0
35
µA
15
5
3
3
2
NOTES:
1. Data includes power consumption for subsystem clock oscillation.
2. When the system clock control register, SCMOD, is set to 1001B, main system clock oscillation stops and the
subsystem clock is used.
3. Currents in the following circuits are not included; on-chip pull-up resistors, internal LCD voltage dividing resistors,
output port drive currents.
14-4

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