DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

S3P72G9 Просмотр технического описания (PDF) - Samsung

Номер в каталоге
Компоненты Описание
производитель
S3P72G9
Samsung
Samsung Samsung
S3P72G9 Datasheet PDF : 96 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
 
 
Name
SCF
RCF
CCF
EI
DI
IDLE
STOP
NOP
SMB
SRB
REF
VENTn
Table 5-9. CPU Control Instructions — High-Level Summary
Operand
n
n
memc
EMB (0,1)
ERB (0,1)
ADR
Operation Description
Set carry flag to logic one
Reset carry flag to logic zero
Complement carry flag
Enable all interrupts
Disable all interrupts
Engage CPU idle mode
Engage CPU stop mode
No operation
Select memory bank
Select register bank
Reference code
Load enable memory bank flag (EMB) and the enable
register bank flag (ERB) and program counter to vector
address, then branch to the corresponding location
Bytes
1
1
1
2
2
2
2
1
2
2
1
2
Cycles
1
1
1
2
2
2
2
1
2
2
3
2
Name
CPSE
LJP
JP
JPS
JR
LCALL
CALL
CALLS
RET
IRET
SRET
Table 5-10. Program Control Instructions — High-Level Summary
Operand
R,#im
@HL,#im
A,R
A,@HL
EA,@HL
EA,RR
ADR
ADR
ADR
#im
@WX
@EA
ADR
ADR
ADR
Operation Description
Compare and skip if register equals #im
Compare and skip if indirect data memory equals #im
Compare and skip if A equals R
Compare and skip if A equals indirect data memory
Compare and skip if EA equals indirect data memory
Compare and skip if EA equals RR
Long jump to direct address (15 bits)
Jump to direct address (14 bits)
Jump direct in page (12 bits)
Jump to immediate address
Branch relative to WX register
Branch relative to EA
Long call direct in page (15 bits)
Call direct in page (14 bits)
Call direct in page (11 bits)
Return from subroutine
Return from interrupt
Return from subroutine and skip
Bytes
2
2
2
1
2
2
3
3
2
1
2
2
3
3
2
1
1
1
Cycles
2+S
2+S
2+S
1+S
2+S
2+S
3
3
2
2
3
3
4
4
3
3
3
3+S


Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]